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PD - 94391A
IRF7341Q
Typical Applications
* Anti-lock Braking Systems (ABS) * Electronic Fuel Injection * Air bag
HEXFET(R) Power MOSFET VDSS
55V
RDS(on) max
0.050@VGS = 10V 0.065@VGS = 4.5V
ID
5.1A 4.42A
Benefits
* * * * * *
Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified
S1 G1 S2 G2
1
Description
Specifically designed for Automotive applications, these HEXFET (R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
8
D1 D1 D2 D2
2
7
3
6
4
5
Top V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS EAS IAR EAR TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain CurrentQ Maximum Power DissipationS Maximum Power DissipationS Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche Energy Junction and Storage Temperature Range
Max.
55 5.1 4.2 42 2.4 1.7 16 20 140 5.1 See Fig. 14, 15, 16 -55 to + 175
Units
V A W W mW/C V mJ A mJ C
Thermal Resistance
Parameter
RJA
Max.
Units
62.5 C/W
Maximum Junction-to-Ambient S
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1
03/14/02
IRF7341Q
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 55 --- --- --- 1.0 10.4 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.052 0.043 0.056 --- --- --- --- --- --- 29 2.9 7.3 9.2 7.7 31 12.5 780 190 66
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.050 VGS = 10V, ID = 5.1A R 0.065 VGS = 4.5V, ID = 4.42A R --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 5.2A 2.0 VDS = 44V, VGS = 0V A 25 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 5.2A 4.4 nC VDS = 44V 11 VGS = 10V --- VDD = 28V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 10V R --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 51 76 2.4 A 42 1.2 77 114 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.6A, VGS = 0V R TJ = 25C, I F = 2.6A di/dt = 100A/s R
D
S
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
S Surface mounted on FR-4 board, t 10sec.
R Pulse width 300s; duty cycle 2%.
2
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IRF7341Q
100
VGS TOP 15.0V 10.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
2.7V
VGS 15.0V 10.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
2.7V
1
1
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 5.2A
I D , Drain-to-Source Current (A)
2.0
TJ = 175 C
10
1.5
1.0
0.5
1 2.0
V DS = 25V 20s PULSE WIDTH 5.0 6.0 3.0 4.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7341Q
1400 1200 1000 800 600 400 200 0 1 10 100 20 VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 5.2A
VGS , Gate-to-Source Voltage (V)
Cds
16
VDS = 44V VDS = 27V VDS = 11V
C, Capacitance(pF)
Ciss
12
8
Coss Crss
4
0 0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
TJ = 175 C
10
OPERATION IN THIS AREA LIMITED BY R
DS(on)
I D , Drain Current (A)
100
10us
10
TJ = 25 C
100us 1ms
1
1
10ms
0.1 0.2
V GS = 0 V
0.5 0.8 1.1 1.4
0.1 0.1
TC = 25 C TJ = 175 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7341Q
6.0
VDS
5.0
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
4.0
- VDD
10V
3.0
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
1.0
0.0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 0.0001 0.001 0.01 0.1 100
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7341Q
RDS ( on ) , Drain-to-Source On Resistance ( )
( RDS(on), Drain-to -Source On Resistance )
0.070
0.100
0.060
0.080
0.050
0.060 VGS = 4.5V 0.040 VGS = 10V 0.020 0 10 20 30 40 50 60 ID , Drain Current ( A )
0.040
0.030
ID = 7.1A
0.020 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate Voltage
QG
Fig 12. Typical On-Resistance Vs. Drain Current
10 V
QGS VG
EAS , Single Pulse Avalanche Energy (mJ)
400
QGD
320
ID TOP 2.1A 4.3A 5.1A BOTTOM
Charge
240
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
160
50K 12V .2F .3F
80
D.U.T. VGS
3mA
+ V - DS
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
IG ID
( C)
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7341Q
100
Duty Cycle = Single Pulse
10
Avalanche Current (A)
1
0.01 0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.1
0.01
0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
140 120
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 5.1A
100 80 60 40 20 0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF7341Q
SO-8 Package Details
D -B -
D IM
5
IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157
M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99
A
6 5 H 0.2 5 (.0 10 ) M AM
5
8 E -A -
7
A1 B C D E e e1 H K
0 .10 (.00 4) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8
1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8
-CB 8X 0 .25 (.01 0) A1 M CASBS
L
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6 .46 ( .25 5 )
1 .78 (.07 0) 8X
1.27 ( .0 50 ) 3X
Part Marking
8
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IRF7341Q
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 )
8 .1 ( .31 8 ) 7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0 (1 2 .9 9 2 ) M AX .
1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice. This product has been designed and qualified for the Autyomotivr [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02
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